June 2026 Micron Technology sampled a 256GB DDR5 RDIMM based on its 1γ DRAM process technology, supporting speeds of up to 9,200 MT/s and targeting high-capacity AI and data-center server platforms.
March 2026 Samsung Electronics and AMD expanded their strategic collaboration to supply next-generation DDR5 memory solutions for AMD EPYC processors and the AMD Helios platform, alongside HBM4 collaboration for advanced AI computing systems.
January 2026 Nanya Technology outlined planned 2026 capital expenditure of approximately NT$50 billion and confirmed functional validation of its 128GB DDR5 RDIMM at 5,600/6,400 Mb/s, with mono-die speeds reaching up to 7,200 Mb/s, strengthening its advanced DRAM product portfolio.
December 2025 ChangXin Memory Technologies announced plans to raise approximately CNY 29.5 billion through a Shanghai initial public offering, with proceeds allocated to production-line upgrades, advanced DRAM R&D, and expansion of next-generation memory technologies and manufacturing capabilities.