GaN Power Device Market

Market Overview

The global GaN power device market size was valued at USD 178.2 million in 2021. It is projected to reach USD 2,799.02 million by 2030, growing at a CAGR of 35.80% during the forecast period (2022–2030). 

Electronic circuits use power semiconductor devices to control the system's energy transfer. A switched mode power supply (SMPS) is a type of power semiconductor device in most devices. Gallium nitride (GaN) is a semiconductor used to fabricate GaN power devices. GaN power devices lower the system's overall energy loss. GaN devices are small and offer high-speed switching and system size reduction, in contrast to traditional transistors that need more chip space to reduce on-resistance. GaN devices are favored over other comprehensive band gap materials like Silicon Carbide (SiC) and Diamond because they offer comparable properties at a lower cost.

Market Dynamics

Global GaN Power Device Market Drivers

Decreasing Prices of GaN Devices

GaN power device use is predicted to expand as prices decrease across various industries. Recently released GaN power transistors and modules feature a wide band gap and provide performance similar to SiC at a significant cost saving. This cost reduction is possible because silicon substrates, which are more readily available and less expensive than SiC, may be used to develop GaN power devices. Compared to silicon metal-oxide-semiconductor field-effect transistors (MOSFETs) and insulated-gate bipolar transistors (IGBTs), GaN-on-silicon devices are anticipated to have performance at least on par with and occasionally even better than those of silicon MOSFETs.

Growing Use in Wireless Charging

WiTricity Corp., a wireless charging business, demonstrated wireless charging with a GaN field effect transistor (FET). Compared to silicon MOSFETs, GAN FETs' switching speed enables higher resonant wireless power transfer efficiency. Silicon-based power MOSFETs' proximity limits higher frequency operation to the upper limit of their switching capability. GaN power devices are employed in wireless charging applications because they have high switching capability. Concerning the carrier frequency in resonant transfer, GaN transistors are superior. This enables them to transfer power over long distances in various consumer, medical, industrial, and automotive applications. GaN devices' declining cost is another element driving demand for them in wireless charging applications.

Global GaN Power Device Market Restraint

Less Availability of GaN Material

Lack of availability is the main barrier to the widespread commercialization of GaN power devices. Even though some GaN devices are readily available, the selection is only available in a small range. Mainly, fewer gadgets use the higher than 600-volt off-line power supplies. The widespread deployment of GaN power devices is also constrained by the absence of defined device ratings and features. There are no actual second sources for any gadgets on the market, which is the main obstacle to the widespread use of GaN devices.

Global GaN Power Device Market Opportunities

Government Initiatives in HVDC and Smart Grid

High-Voltage Direct Current (HVDC) electric power transmission systems and smart grids are two areas where GaN power devices are employed. These have improved load balancing, a more flexible network topology, and real-time troubleshooting capabilities. Power devices can control high voltage because it makes high-frequency switching more effective. Modular multilevel converters (MMC) also employ power modules, which reduce power loss. In HVDC systems, converters using GaN power device modules are frequently employed. Additionally, governments from many nations, including China, Japan, and the US, make significant investments in smart grid technology to upgrade their electrical networks.

Regional Analysis

North America Dominates the Global Market

The global GaN power device market is bifurcated into four regions, namely North America, Europe, Asia-Pacific, and LAMEA.

North America is the largest shareholder in the global GaN power devices market and is expected to grow at a CAGR of 34.60% during the forecast period. North America is the market leader for GaN power devices due to the presence of nations like the U.S. and Canada, where the governments are increasing their involvement in the fight against pollution by encouraging the use of EVs and HEVs, which extensively use GaN power devices. Another factor driving the growth of the GaN power device market in this region is the U.S.'s most significant defense expenditure.

Europe is anticipated to grow at a CAGR of 36.20%, generating USD 842.55 million during the forecast period. Germany holds the most significant market share among all of the European nations. GaN power devices have various chances for expansion in Europe due to the rise in digital electronic devices, increasing adoption of modern electronic vehicles, and advanced virtual systems. The market in European nations is anticipated to increase quickly in the following years due to the need for cutting-edge electric automobiles. The acquisition of smaller businesses, the rise in the adoption of low-power consumption products, and proactive government actions in the form of subsidiaries all contribute to the market's overall growth.

Asia-Pacific is the region with the highest growth rates for the GaN power device market share, owing to the presence of large power stations for high voltage power, increased demand for power modules, and the population increase. Furthermore, it is predicted that power electronics systems using GaN transistors process about 70% of all electrical energy. These devices are widely used in numerous industry sectors, including automobile, renewable energy facilities, and electric grid infrastructure. Organizations from several industries have learned how crucial power equipment is for power management. Strong demand for automated switching devices and power modules is also anticipated to propel market expansion.

The expansion of the GaN power device market demand in LAMEA is anticipated to be fueled by the region's rising demand for robust power ICs. GaN power modules are in high demand in the region due to their excellent efficiency. The rising desire for cutting-edge technology, which drives the adoption of power electronics in electronic products like refrigerators, televisions, and washing machines, has also helped Latin America acquire recognition among global players. The market for LAMEA GaN power devices is expanding due to rising demand for power management devices across several electronic industry verticals and an increase in the number of electric cars.

Segmental Analysis

The global GaN power device market is segmented by device and industrial vertical.

By Device Analysis

Based on the device, the global market is bifurcated into GaN power discrete devices, GaN power ICs and GaN power modules.

The GaN power module segment is the highest contributor to the market and is expected to grow at a CAGR of 33.80% during the forecast period. GaN power modules have become more and more popular all over the world because of their unmatched endurance and efficiency. IGBT and MOSFET modules are widely used in many industries to power high-voltage devices, including welders, rolling mills, and water pumps. GaN power modules are gradually replacing their equivalents due to their lower price and higher efficiency. The market is expanding due to the preference for this power module in the current business environment due to its affordability and ease of control at high voltage.

GaN power discrete devices are electronic parts having only one active (a diode) or passive (a resistor, capacitor, inductor, and capacitor) circuit component (transistor or vacuum tube). They have compact designs, are lightweight, and use little electricity. These gadgets consist of transistor arrays, MOSFETs, J-FETs, bipolar transistors, and transistors with inbuilt resistors. Compared to silicon devices, Power GaN separate devices can switch at extremely high speeds with substantially lower switching losses and higher efficiency because of their low gate charge and output capacitance. For instance, the 80V GaN FET power stage, The LMG5200, has a compact form factor and is suited for high-efficiency applications.

By Industrial Vertical Analysis

Based on the industrial vertical, the global market is bifurcated into consumer electronics, IT and telecommunication, automotive, aerospace and defense, and others.

The IT and telecommunication segment owns the highest market share and is anticipated to grow at a CAGR of 36.10% during the forecast period. Due to its unique characteristics, such as its enormous energy band gap and high saturation electron velocity, GaN devices must operate high-power and high-speed electron devices in communications. Compared to the currently used Gallium Arsenic (GaA) devices, the GaN high electron mobility transistor (HEMT) has better properties in high power and broadband applications. Wideband power microwave systems in communication now have new prospects due to these devices' high power density and comparatively high impedance.

GaN power devices pave the way in consumer electronics for wireless charging, a disruptive technology quickly gaining popularity. Fast charging for smartphones is also made possible by the usage of GaN power devices. Furthermore, wireless charging contributes to faster charging times, improved converter efficiency for photovoltaic module converters, and smaller photovoltaic module sizes. Laptops, smartphones, and photovoltaic module chargers are the main drivers of GaN power device utilization for wireless charging.

For electric and hybrid automobiles, GaN power devices are employed. There are two types of GaN power devices designed for usage in the automotive industry: lateral and vertical GaN power devices. Compared to Si-power MOSFETS, lateral GaN power devices have higher blocking voltages of 600 volts, improved performance traits, reduced internal resistance, and high-speed resonance, making them the most popular. Future applications in car electrification provide significant assurance for GaN power devices. It has been stated that relevant material and gadget technology has advanced quickly in the last ten years. GaN power devices are anticipated to become more prevalent in EV/HEV units from the standpoint of obtaining lower electrical power conversion losses.

Recent Developments

• September 2022- With the release of the 100 V EPC2306, designed for 48 V DC-DC conversion used in high-density computing applications, 48 V BLDC motor drives for e-mobility and robotics, as well as solar optimizers and microinverters, and Class D Audio, EPC, the world's leading manufacturer of enhancement-mode gallium nitride (eGaN®) power FETs and ICs, expands the selection of off-the-shelf GaN.
• September 2022- Fujitsu Limited announced a thorough overhaul to strengthen its modernization services offerings (DX). To design the appropriate DX platform, Fujitsu will collaborate with clients to visualize their current assets, including business processes, data, applications, and IT infrastructure. It will also offer assistance in streamlining and modernizing systems.